Pressure dependence of rate coefficients of unimolecular and chemical activation reactions connected to the potential energy wells of chlorinated monosilanes by RRKM calculations

Abstract Rate coefficients for elementary reactions connected to the potential energy wells of SiHCl 3 , SiH 2 Cl and Cl, which are important Si 1 species in chemical vapor deposition (CVD) processes that use chlorosilanes as silicon source gases, were determined through Rice–Ramsperger–Kassel–Marcus (RRKM) theory various conditions temperature pressure. Many unimolecular decomposition channels activation investigated this work found be fall‐off regime under subatmospheric moderately high‐pressure conditions, so it is expected accurate modeling gas phase chlorosilane CVD reactors requires careful determination rate functions pressure interest, instead using limit coefficients. The here tabulated Chebyshev can used simulations systems a wide range conditions.